dmn3730u 30v n-channel enhancement mode mosfet in sot23 product summary v (br)dss max r ds(on) i d max (note 5) t a = 25 c 30v 460m @ v gs = 4.5v 0.94a 560m @ v gs = 2.5v 0.85a description and applications this mosfet has been designed to minimize the on-state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal for high efficiency po wer management applications. ? load switch ? portable applications ? power management functions features and benefits ? low v gs(th), can be driven directly from a battery ? low r ds(on) ? ?lead free?, rohs compliant (note 1) ? halogen and antimony free. "green" device (note 2) ? esd protected gate 2kv ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot23 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish-matte tin. ? weight: 0.08 grams (approximate) ordering information (note 3) part number marking reel size (inches) tape width (mm) quantity per reel DMN3730U-7 n3u 7 8 3,000 notes: 1. no purposefully added lead marking information date code key year 2011 2012 2013 2014 2015 2016 2017 code y z a b c d e month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d n3u = product type marking code ym = date code marking y = year (ex: y = 2011) m = month (ex: 9 = september) sot23 top view top view pin-out equivalent circuit d g s esd protected to 2kv source gate drain body diode gate protection diode n3u ym product specification sales@twtysemi.com 1 of 3 http://www.twtysemi.com
maximum ratings @t a = 25c unless otherwise specified characteristic symbol value unit drain-source voltage v dss 30 v gate-source voltage v gss 8 v continuous drain current steady state t a = 25c (note 5) t a = 85c (note 5) t a = 25c (note 4) i d 0.94 0.68 0.75 a pulsed drain current (note 6) i dm 10 a thermal characteristics @t a = 25c unless otherwise specified characteristic symbol value unit power dissipation (note 4) p d 0.45 w (note 5) 0.71 w thermal resistance, junction to ambient (note 4) r ja 275 c/w (note 5) 177 c/w operating and storage temperature range t j , t stg -55 to +150 c notes: 2. device mounted on fr-4 substrate pc board, 2oz copper, with minimum recommended pad layout 3. device mounted on 25mm x 25mm square copper pl ate with fr-4 substrate pc board, 2oz copper 4. device mounted on minimum recommended pad layout test board, 10 p s pulse duty cycle = 1%. dmn3730u product specification sales@twtysemi.com 2 of 3 http://www.twtysemi.com
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 r (t) = r(t)*r r = 176c/w duty cycle, d = t1/t2 ? ja ja ja t1, pulse duration time (sec) fig. 3 transient thermal resistance 0.001 0.01 0.1 1 r(t), transient thermal resisitance r(t) @ d=single pulse r(t) @ d=0.005 r(t) @ d=0.01 r(t) @ d=0.01 r(t) @ d=0.05 r(t) @ d=0.1 r(t) @ d=0.3 r(t) @ d=0.5 r(t) @ d=0.7 r(t) @ d=0.9 electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics drain-source breakdown voltage bv dss 30 - - v v gs = 0v, i d = 10 a zero gate voltage drain current i dss - - 1 a v ds = 30v, v gs = 0v gate-source leakage i gss - - 3 a v gs = 8v, v ds = 0v on characteristics gate threshold voltage v gs ( th ) 0.45 - 0.95 v v ds = v gs , i d = 250 a static drain-source on-resistance (note 7) r ds(on) - - 460 m v gs = 4.5v, i d = 200ma 560 v gs = 2.5v, i d = 100ma 730 v gs = 1.8v, i d = 75ma forward transfer admittance |y fs | 40 - - ms v ds = 3v, i d = 10ma diode forward voltage (note 7) v sd - 0.7 1.2 v v gs = 0v, i s = 300ma dynamic characteristics (note 8) input capacitance c iss - 64.3 - pf v ds = 25v, v gs = 0v, f = 1.0mhz output capacitance c oss - 6.1 - pf reverse transfer capacitance c rss - 4.5 - pf gate resistance r g - 70 - v ds = 0v, v gs = 0v, f = 1mhz total gate charge q g - 1.6 - nc v gs = 4.5v, v ds = 15v, i d = 1a gate-source charge q g s - 0.2 - nc gate-drain charge q g d - 0.2 - nc turn-on delay time t d ( on ) - 3.5 - ns v ds = 10v, i d = 1a v gs = 10v, r g = 6 turn-on rise time t r - 2.8 - ns turn-off delay time t d ( off ) - 38 - ns turn-off fall time t f - 13 - ns notes: 5. measured under pulsed conditions to minimize self-heating effect. pulse width 300 s; duty cycle 2% 6. for design aid only, not subject to production testing. dmn3730u product specification sales@twtysemi.com 3 of 3 http://www.twtysemi.com
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